| 1 |
TC59 |
Low Dropout, Negative Output Voltage Regulator |
584K |
|
|
| 2 |
TC59 |
Axial Leaded Aluminum Electrolytic Capacitors |
155K |
|
|
| 3 |
TC59 |
Low Dropout, Negative Output Voltage Regulator |
584K |
|
|
| 4 |
TC593 |
Axial Leaded Aluminum Electrolytic Capacitors |
155K |
|
|
| 5 |
TC593002ECB |
Low Dropout, Negative Output Voltage Regulator |
584K |
|
|
| 6 |
TC594 |
Axial Leaded Aluminum Electrolytic Capacitors |
155K |
|
|
| 7 |
TC595002ECB |
Low Dropout, Negative Output Voltage Regulator |
584K |
|
|
| 8 |
TC59A |
Axial Leaded Aluminum Electrolytic Capacitors |
155K |
|
|
| 9 |
TC59LM806CFT-50 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
| 10 |
TC59LM806CFT-55 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
| 11 |
TC59LM806CFT-60 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
| 12 |
TC59LM814CFT |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
| 13 |
TC59LM814CFT-50 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
| 14 |
TC59LM814CFT-55 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
| 15 |
TC59LM814CFT-60 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
| 16 |
TC59LM818DMB-33 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
744K |
|
|
| 17 |
TC59LM818DMB-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
744K |
|
|
| 18 |
TC59LM818DMG-33 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
743K |
|
|
| 19 |
TC59LM818DMG-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
743K |
|
|
| 20 |
TC59LM836DKB-30 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
853K |
|
|
| 21 |
TC59LM836DKB-33 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
853K |
|
|
| 22 |
TC59LM836DKB-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
853K |
|
|
| 23 |
TC59LM836DKG-30 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
861K |
|
|
| 24 |
TC59LM836DKG-33 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
861K |
|
|
| 25 |
TC59LM836DKG-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
861K |
|
|
| 26 |
TC59LM906AMG |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
| 27 |
TC59LM906AMG-37 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
| 28 |
TC59LM906AMG-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
| 29 |
TC59LM913AMB-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
518K |
|
|
| 30 |
TC59LM913AMG-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
512K |
|
|
| 31 |
TC59LM914AMG |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
| 32 |
TC59LM914AMG-37 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
| 33 |
TC59LM914AMG-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
| 34 |
TC59S6404 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 35 |
TC59S6404 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 36 |
TC59S6404BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 37 |
TC59S6404BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 38 |
TC59S6404BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
2606K |
|
|
| 39 |
TC59S6404BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
2606K |
|
|
| 40 |
TC59S6404BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 41 |
TC59S6404BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 42 |
TC59S6404BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 43 |
TC59S6404BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 44 |
TC59S6404BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 45 |
TC59S6404BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 46 |
TC59S6408 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 47 |
TC59S6408 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 48 |
TC59S6408BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 49 |
TC59S6408BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
| 50 |
TC59S6408BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
2606K |
|
|