| 1 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
31K |
|
|
| 2 |
BAR81W |
Silicon RF Switching Diode |
417K |
|
|
| 3 |
BAR81W |
Silicon RF Switching Diode |
77K |
|
|
| 4 |
BAR81W |
Silicon RF Switching Diode |
37K |
|
|
