1 |
BAR81W |
Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) |
31K |
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2 |
BAR81W |
Silicon RF Switching Diode |
417K |
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3 |
BAR81W |
Silicon RF Switching Diode |
77K |
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4 |
BAR81W |
Silicon RF Switching Diode |
37K |
|
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