1 |
TC59 |
Low Dropout, Negative Output Voltage Regulator |
584K |
|
|
2 |
TC59 |
Axial Leaded Aluminum Electrolytic Capacitors |
155K |
|
|
3 |
TC59 |
Low Dropout, Negative Output Voltage Regulator |
584K |
|
|
4 |
TC593 |
Axial Leaded Aluminum Electrolytic Capacitors |
155K |
|
|
5 |
TC593002ECB |
Low Dropout, Negative Output Voltage Regulator |
584K |
|
|
6 |
TC594 |
Axial Leaded Aluminum Electrolytic Capacitors |
155K |
|
|
7 |
TC595002ECB |
Low Dropout, Negative Output Voltage Regulator |
584K |
|
|
8 |
TC59A |
Axial Leaded Aluminum Electrolytic Capacitors |
155K |
|
|
9 |
TC59LM806CFT-50 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
10 |
TC59LM806CFT-55 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
11 |
TC59LM806CFT-60 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
12 |
TC59LM814CFT |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
13 |
TC59LM814CFT-50 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
14 |
TC59LM814CFT-55 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
15 |
TC59LM814CFT-60 |
4,194,304 / 8,388,608-WORDS x 4 BANKS x 16 / 8-BITS Network FCRAM |
2382K |
|
|
16 |
TC59LM818DMB-33 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
744K |
|
|
17 |
TC59LM818DMB-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
744K |
|
|
18 |
TC59LM818DMG-33 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
743K |
|
|
19 |
TC59LM818DMG-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
743K |
|
|
20 |
TC59LM836DKB-30 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
853K |
|
|
21 |
TC59LM836DKB-33 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
853K |
|
|
22 |
TC59LM836DKB-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 288Mbits Network FCRAM2 |
853K |
|
|
23 |
TC59LM836DKG-30 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
861K |
|
|
24 |
TC59LM836DKG-33 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
861K |
|
|
25 |
TC59LM836DKG-40 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
861K |
|
|
26 |
TC59LM906AMG |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
27 |
TC59LM906AMG-37 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
28 |
TC59LM906AMG-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
29 |
TC59LM913AMB-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
518K |
|
|
30 |
TC59LM913AMG-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
512K |
|
|
31 |
TC59LM914AMG |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
32 |
TC59LM914AMG-37 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
33 |
TC59LM914AMG-50 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
817K |
|
|
34 |
TC59S6404 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
35 |
TC59S6404 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
36 |
TC59S6404BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
37 |
TC59S6404BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
38 |
TC59S6404BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
2606K |
|
|
39 |
TC59S6404BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
2606K |
|
|
40 |
TC59S6404BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
41 |
TC59S6404BFT-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
42 |
TC59S6404BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
43 |
TC59S6404BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
44 |
TC59S6404BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
45 |
TC59S6404BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
46 |
TC59S6408 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
47 |
TC59S6408 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
48 |
TC59S6408BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
49 |
TC59S6408BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
2606K |
|
|
50 |
TC59S6408BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
2606K |
|
|