| 481 |
TPC7.5 |
Surface Mount PAR Transient Voltage Suppressors
|
94K |
|
 |
| 482 |
TPC7.5A |
Surface Mount PAR Transient Voltage Suppressors
|
94K |
|
|
| 483 |
TPC7.5A |
Surface Mount Automotive Transient Voltage Suppressors
|
113K |
|
|
| 484 |
TPC75A12 |
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|300MA I(S)|TO-220
|
332K |
|
|
| 485 |
TPC75A18 |
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|100V V(BO) MAX|300MA I(S)|TO-220
|
332K |
|
|
| 486 |
TPC75B12 |
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|91V V(BO) MAX|300MA I(S)|TO-220
|
332K |
|
|
| 487 |
TPC75B18 |
SINGLE UNIDIRECTIONAL BREAKOVER DIODE|91V V(BO) MAX|300MA I(S)|TO-220
|
332K |
|
|
| 488 |
TPC8.2 |
Surface Mount Automotive Transient Voltage Suppressors
|
113K |
|
|
| 489 |
TPC8.2 |
Surface Mount PAR Transient Voltage Suppressors
|
94K |
|
|
| 490 |
TPC8.2A |
Surface Mount PAR Transient Voltage Suppressors
|
94K |
|
|
| 491 |
TPC8.2A |
Surface Mount Automotive Transient Voltage Suppressors
|
113K |
|
|
| 492 |
TPC8001 |
Silicon N Channel MOS Type (MOSVI)
|
526K |
|
|
| 493 |
TPC8001 |
Silicon N Channel MOS Type (MOSVI)
|
526K |
|
|
| 494 |
TPC8002 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
|
527K |
|
|
| 495 |
TPC8002 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI)
|
527K |
|
|
| 496 |
TPC8003 |
Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
|
511K |
|
|
| 497 |
TPC8003 |
Field Effect Transistor Silicon N Channel MOS Type (U−MOSII)
|
511K |
|
|
| 498 |
TPC8004 |
Silicon N Channel MOS Type (MOSVI)
|
522K |
|
|
| 499 |
TPC8004 |
Silicon N Channel MOS Type (MOSVI)
|
522K |
|
|
| 500 |
TPC8005-H |
Silicon N Channel MOS Type (High Speed U−MOS)
|
524K |
|
|
| 501 |
TPC8005-H |
Silicon N Channel MOS Type (High Speed U−MOS)
|
524K |
|
|
| 502 |
TPC8006-H |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
304K |
|
|
| 503 |
TPC8006-H |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
304K |
|
|
| 504 |
TPC8006-H |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
304K |
|
|
| 505 |
TPC8006-H |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
|
304K |
|
|
| 506 |
TPC8007-H |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 13A I(D) | SO
|
309K |
|
|
| 507 |
TPC8009-H |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
|
190K |
|
|
| 508 |
TPC8009-H_06 |
High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable-Equipment Applications
|
232K |
|
|
| 509 |
TPC8010-H |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (High speed U-MOSIII)
|
350K |
|
|
| 510 |
TPC8012-H |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1.8A I(D) | SO
|
122K |
|
|
