| 181 |
2SC3571L |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | SOT-186VAR
|
184K |
|
 |
| 182 |
2SC3571M |
TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 7A I(C) | SOT-186VAR
|
184K |
|
|
| 183 |
2SC3572 |
NPN SILICON POWER TRANSISTOR
|
192K |
|
|
| 184 |
2SC3576 |
High-hFE, Low-Frequency General-Purpose Amp Applications
|
86K |
|
|
| 185 |
2SC3577 |
Silicon NPN Power Transistors
|
120K |
|
|
| 186 |
2SC3577 |
Silicon NPN Power Transistors
|
130K |
|
|
| 187 |
2SC3577 |
TRANSISTOR | BJT | NPN | 650V V(BR)CEO | 5A I(C) | TO-247VAR
|
163K |
|
|
| 188 |
2SC3580 |
SMALL-SIGNAL TRANSISTOR
|
123K |
|
|
| 189 |
2SC3581 |
SMALL-SIGNAL TRANSISTOR
|
124K |
|
|
| 190 |
2SC3582 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
102K |
|
|
| 191 |
2SC3582(NE68132) |
Discrete
|
90K |
|
|
| 192 |
2SC3582K |
BJT
|
102K |
|
|
| 193 |
2SC3583 |
NPN Silicon Epitaxial Transistor
|
41K |
|
|
| 194 |
2SC3583 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
106K |
|
|
| 195 |
2SC3583(NE68133) |
Discrete
|
94K |
|
|
| 196 |
2SC3583Q |
BJT
|
106K |
|
|
| 197 |
2SC3583R |
BJT
|
106K |
|
|
| 198 |
2SC3583R33 |
BJT
|
106K |
|
|
| 199 |
2SC3583R34 |
BJT
|
106K |
|
|
| 200 |
2SC3583R35 |
BJT
|
106K |
|
|
| 201 |
2SC3583S |
BJT
|
106K |
|
|
| 202 |
2SC3585 |
NPN Silicon Epitaxial Transistor
|
38K |
|
|
| 203 |
2SC3585 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR
|
106K |
|
|
| 204 |
2SC3585(NE68033) |
Discrete
|
94K |
|
|
| 205 |
2SC3585Q |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
|
106K |
|
|
| 206 |
2SC3585R |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
|
106K |
|
|
| 207 |
2SC3585R43 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
|
106K |
|
|
| 208 |
2SC3585R44 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
|
106K |
|
|
| 209 |
2SC3585R45 |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
|
106K |
|
|
| 210 |
2SC3585S |
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 35MA I(C) | SOT-346
|
106K |
|
|
