| 1 |
2N5570 |
BIDIRECTIONAL TRIODE THYRISTORS
|
188K |
|
 |
| 2 |
2N5570 |
BIDIRECTIONAL TRIODE THYRISTORS
|
188K |
|
|
| 3 |
2N5570 |
TRIACS BIDIRECTIONAL TRIODE THYRISTORS
|
120K |
|
|
| 4 |
2N5571 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
185K |
|
|
| 5 |
2N5571 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
185K |
|
|
| 6 |
2N5572 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
185K |
|
|
| 7 |
2N5572 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
185K |
|
|
| 8 |
2N5573 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
185K |
|
|
| 9 |
2N5573 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
185K |
|
|
| 10 |
2N5573 |
TRIAC, V(DRM) = 200V TO 299.9V
|
95K |
|
|
| 11 |
2N5574 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
185K |
|
|
| 12 |
2N5574 |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
185K |
|
|
| 13 |
2N5574 |
5-A SILICON TRIAC
|
191K |
|
|
| 14 |
2N5575 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
11K |
|
|
| 15 |
2N5575 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
11K |
|
|
| 16 |
2N5575 |
SI NPN POWER BJT, I(C)
|
79K |
|
|
| 17 |
2N5578 |
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 60A I(C) | TO-3
|
65K |
|
|
