| 序号 | 型号 | 描述 | 大小 | 厂家Logo | 下载 |
|---|
| 1 | P281 | PATENTED GOLD METALLIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | 39K |
|
|
| 2 | P2811 | Low-Power EMI Reduction IC | 391K |
|
|
| 3 | P2811A-08SR | Low-Power EMI Reduction IC | 391K |
|
|
| 4 | P2811A-08ST | Low-Power EMI Reduction IC | 391K |
|
|
| 5 | P2811A-08TR | Low-Power EMI Reduction IC | 391K |
|
|
| 6 | P2811A-08TT | Low-Power EMI Reduction IC | 391K |
|
|
| 7 | P2811AF-08SR | Low-Power EMI Reduction IC | 391K |
|
|
| 8 | P2811AF-08ST | Low-Power EMI Reduction IC | 391K |
|
|
| 9 | P2811AF-08TR | Low-Power EMI Reduction IC | 391K |
|
|
| 10 | P2811AF-08TT | Low-Power EMI Reduction IC | 391K |
|
|
| 11 | P2812A-08SR | Low-Power EMI Reduction IC | 391K |
|
|
| 12 | P2812A-08ST | Low-Power EMI Reduction IC | 391K |
|
|
| 13 | P2812A-08TR | Low-Power EMI Reduction IC | 391K |
|
|
| 14 | P2812A-08TT | Low-Power EMI Reduction IC | 391K |
|
|
| 15 | P2812AF-08SR | Low-Power EMI Reduction IC | 391K |
|
|
| 16 | P2812AF-08ST | Low-Power EMI Reduction IC | 391K |
|
|
| 17 | P2812AF-08TR | Low-Power EMI Reduction IC | 391K |
|
|
| 18 | P2812AF-08TT | Low-Power EMI Reduction IC | 391K |
|
|
| 19 | P2814A-08SR | Low-Power EMI Reduction IC | 391K |
|
|
| 20 | P2814A-08ST | Low-Power EMI Reduction IC | 391K |
|
|
| 21 | P2814A-08TR | Low-Power EMI Reduction IC | 391K |
|
|
| 22 | P2814A-08TT | Low-Power EMI Reduction IC | 391K |
|
|
| 23 | P2814AF-08SR | Low-Power EMI Reduction IC | 391K |
|
|
| 24 | P2814AF-08ST | Low-Power EMI Reduction IC | 391K |
|
|
| 25 | P2814AF-08TR | Low-Power EMI Reduction IC | 391K |
|
|
| 26 | P2814AF-08TT | Low-Power EMI Reduction IC | 391K |
|
|
