1 |
NE5520279A |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
170K |
|
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2 |
NE5520279A |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
170K |
|
|
3 |
NE5520279A |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
359K |
|
|
4 |
NE5520279A-T1 |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
170K |
|
|
5 |
NE5520279A-T1 |
NECS 3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
171K |
|
|
6 |
NE5520279A-T1-A |
3.2 V, 2 W, L&S BAND MEDIUM POWER SILICON LD-MOSFET |
359K |
|
|
7 |
NE5520379A |
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET |
399K |
|
|
8 |
NE5520379A-T1A-A |
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET |
399K |
|
|
9 |
NE5521 |
LVDT signal conditioner |
71K |
|
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10 |
NE5521D |
LVDT signal conditioner |
71K |
|
|
11 |
NE5521D-T |
LVDT Conditioner
|
169K |
|
|
12 |
NE5521N |
LVDT signal conditioner |
71K |
|
|
13 |
NE552R479A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
506K |
|
|
14 |
NE552R479A-T1A-A |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET |
506K |
|
|
15 |
NE552R679A |
Discrete
|
82K |
|
|
16 |
NE552R679A |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
77K |
|
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17 |
NE552R679A |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
77K |
|
|
18 |
NE552R679A-T1 |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
77K |
|
|
19 |
NE552R679A-T1 |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
77K |
|
|
20 |
NE552R679A-T1A |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
77K |
|
|
21 |
NE552R679A-T1A |
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS |
77K |
|
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