| 序号 | 型号 | 描述 | 大小 | 厂家Logo | 下载 |
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| 1 | GT30J121 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | 302K |
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| 2 | GT30J121 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT | 302K |
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| 3 | GT30J121_06 | Silicon N Channel IGBT High Power Switching Applications | 186K |
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