| 1 |
BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
20K |
|
|
| 2 |
BUL52 |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
20K |
|
|
| 3 |
BUL52A |
TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 4A I(C) | TO-220
|
32K |
|
|
| 4 |
BUL52A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
24K |
|
|
| 5 |
BUL52AFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
65K |
|
|
| 6 |
BUL52ASMD |
Bipolar NPN Device in a Hermetically sealed |
15K |
|
|
| 7 |
BUL52B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
20K |
|
|
| 8 |
BUL52B |
Silicon PNP Power Transistors |
93K |
|
|
| 9 |
BUL52B |
Silicon Power Transistors |
90K |
|
|
| 10 |
BUL52BFI |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR |
19K |
|
|
| 11 |
BUL52BSMD |
Bipolar NPN Device in a Hermetically sealed |
15K |
|
|
