| 1 |
BF1 |
ELEKTRODENHALTER
|
124K |
|
|
| 2 |
BF1005 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
53K |
|
|
| 3 |
BF1005 |
Silicon N-Channel MOSFET Tetrode |
258K |
|
|
| 4 |
BF1005 |
Silicon N-Channel MOSFET Tetrode |
86K |
|
|
| 5 |
BF1005_07 |
Silicon N-Channel MOSFET Tetrode |
86K |
|
|
| 6 |
BF1005R |
Silicon N-Channel MOSFET Tetrode |
258K |
|
|
| 7 |
BF1005R |
Silicon N-Channel MOSFET Tetrode |
86K |
|
|
| 8 |
BF1005S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
54K |
|
|
| 9 |
BF1005S |
Silicon N-Channel MOSFET Tetrode |
258K |
|
|
| 10 |
BF1005S |
Silicon N-Channel MOSFET Tetrode |
87K |
|
|
| 11 |
BF1005S_07 |
Silicon N-Channel MOSFET Tetrode |
87K |
|
|
| 12 |
BF1005SR |
Silicon N-Channel MOSFET Tetrode |
258K |
|
|
| 13 |
BF1005SR |
Silicon N-Channel MOSFET Tetrode |
87K |
|
|
| 14 |
BF1005SW |
Silicon N-Channel MOSFET Tetrode |
258K |
|
|
| 15 |
BF1005W |
Silicon N-Channel MOSFET Tetrode |
258K |
|
|
| 16 |
BF1009 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9 V Integrated stabilized bias network |
34K |
|
|
| 17 |
BF1009 |
Silicon N-Channel MOSFET Tetrode |
37K |
|
|
| 18 |
BF1009S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
53K |
|
|
| 19 |
BF1009S |
Silicon N-Channel MOSFET Tetrode |
257K |
|
|
| 20 |
BF1009S |
Silicon N-Channel MOSFET Tetrode |
86K |
|
|
| 21 |
BF1009S_07 |
Silicon N-Channel MOSFET Tetrode |
86K |
|
|
| 22 |
BF1009SR |
Silicon N-Channel MOSFET Tetrode |
257K |
|
|
| 23 |
BF1009SR |
Silicon N-Channel MOSFET Tetrode |
86K |
|
|
| 24 |
BF1009SW |
TRANSISTOR | MOSFET | N-CHANNEL | 16V V(BR)DSS | 25MA I(D) | SOT-343R
|
37K |
|
|
| 25 |
BF100V |
SSR CONTROL MODULE 0-10V
|
142K |
|
|
| 26 |
BF1012 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
34K |
|
|
| 27 |
BF1012S |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
44K |
|
|
| 28 |
BF1012W |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz) |
367K |
|
|
| 29 |
BF1100 |
Dual-gate MOS-FETs |
163K |
|
|
| 30 |
BF1100 |
Dual-gate MOS-FETs |
319K |
|
|
| 31 |
BF1100/R |
Dual-Gate MOS-FETs
|
241K |
|
|
| 32 |
BF1100/WR |
Dual-Gate MOS-FETs
|
223K |
|
|
| 33 |
BF1100R |
Dual-gate MOS-FETs |
163K |
|
|
| 34 |
BF1100R |
Dual-gate MOS-FETs |
319K |
|
|
| 35 |
BF1100RT/R |
TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143R
|
692K |
|
|
| 36 |
BF1100T/R |
TRANSISTOR | MOSFET | N-CHANNEL | 14V V(BR)DSS | 30MA I(D) | SOT-143
|
692K |
|
|
| 37 |
BF1100WR |
Dual-gate MOS-FET |
149K |
|
|
| 38 |
BF1101 |
N-channel dual-gate MOS-FETs |
131K |
|
|
| 39 |
BF1101R |
N-channel dual-gate MOS-FETs |
131K |
|
|
| 40 |
BF1101WR |
N-channel dual-gate MOS-FETs |
131K |
|
|
| 41 |
BF1102 |
Dual N-channel dual gate MOS-FET |
158K |
|
|
| 42 |
BF1102_00 |
Dual N-channel dual gate MOS-FETs |
136K |
|
|
| 43 |
BF1102R |
Dual N-channel dual gate MOS-FETs
|
123K |
|
|
| 44 |
BF1102R |
Dual N-channel dual gate MOS-FETs |
136K |
|
|
| 45 |
BF1105 |
N-channel dual-gate MOS-FETs |
156K |
|
|
| 46 |
BF1105R |
N-channel dual-gate MOS-FETs |
156K |
|
|
| 47 |
BF1105WR |
N-channel dual-gate MOS-FETs |
156K |
|
|
| 48 |
BF1107 |
N-channel single gate MOS-FETs |
55K |
|
|
| 49 |
BF1107 |
N-channel single gate MOSFET |
61K |
|
|
| 50 |
BF1107W |
N-channel single gate MOS-FETs |
55K |
|
|
