| 序号 | 型号 | 描述 | 大小 | 厂家Logo | 下载 | 
|---|
| 1 | APT1001RBLC | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 36K | 
		     
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| 序号 | 型号 | 描述 | 大小 | 厂家Logo | 下载 | 
|---|
| 1 | APT1001RBLC | Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs | 36K | 
		     
		 | 
		
		 
		 |