| 1 |
APT1001 |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
36K |
|
|
| 2 |
APT1001 |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
36K |
|
|
| 3 |
APT1001R1AN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
|
214K |
|
|
| 4 |
APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs |
69K |
|
|
| 5 |
APT1001R1BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
53K |
|
|
| 6 |
APT1001R1BNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD
|
189K |
|
|
| 7 |
APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
72K |
|
|
| 8 |
APT1001R1DN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
|
395K |
|
|
| 9 |
APT1001R1HN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
|
227K |
|
|
| 10 |
APT1001R1HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
68K |
|
|
| 11 |
APT1001R1SN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
|
247K |
|
|
| 12 |
APT1001R2AN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3
|
61K |
|
|
| 13 |
APT1001R2BN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-247AD
|
63K |
|
|
| 14 |
APT1001R2HN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-247HERM
|
54K |
|
|
| 15 |
APT1001R3AN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 8.5A I(D) | TO-3
|
214K |
|
|
| 16 |
APT1001R3BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
53K |
|
|
| 17 |
APT1001R3HN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-258ISO
|
227K |
|
|
| 18 |
APT1001R6BFLL |
POWER MOS 7 R FREDFET |
156K |
|
|
| 19 |
APT1001R6BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
51K |
|
|
| 20 |
APT1001R6SFLL |
POWER MOS 7 R FREDFET |
156K |
|
|
| 21 |
APT1001RAN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
|
61K |
|
|
| 22 |
APT1001RBLC |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
36K |
|
|
| 23 |
APT1001RBN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
52K |
|
|
| 24 |
APT1001RBNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD
|
189K |
|
|
| 25 |
APT1001RBVFR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD
|
100K |
|
|
| 26 |
APT1001RBVFR |
POWER MOS V FREDFET |
126K |
|
|
| 27 |
APT1001RBVFR |
POWER MOS V FREDFET |
126K |
|
|
| 28 |
APT1001RBVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
69K |
|
|
| 29 |
APT1001RDN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
|
395K |
|
|
| 30 |
APT1001RSLC |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
36K |
|
|
| 31 |
APT1001RSVFR |
POWER MOS V FREDFET |
126K |
|
|
| 32 |
APT1001RSVFR |
POWER MOS V FREDFET |
126K |
|
|
| 33 |
APT1001RSVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
72K |
|
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