| 1 |
2N320 |
alloy-junction germanium transistors |
274K |
|
|
| 2 |
2N320 |
alloy-junction germanium transistors |
279K |
|
|
| 3 |
2N3202 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
12K |
|
|
| 4 |
2N3202 |
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package |
12K |
|
|
| 5 |
2N3203 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 3A I(C) | TO-5
|
239K |
|
|
| 6 |
2N3204 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 3A I(C) | TO-5
|
113K |
|
|
| 7 |
2N3209 |
HIGH-SPEED SATURATED SWITCHES |
116K |
|
|
| 8 |
2N3209 |
Small Signal Transistors |
34K |
|
|
| 9 |
2N3209 |
HIGH SPEED PNP SILICON PLANAR EPITAXIAL |
278K |
|
|
| 10 |
2N3209CSM |
HIGH SPEED, PNP, SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
20K |
|
|
| 11 |
2N3209DCSM |
DUAL HIGH SPEED, MEDIUM POWER PNP GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE |
16K |
|
|
| 12 |
2N3209L |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-18
|
230K |
|
|
| 13 |
2N321 |
alloy-junction germanium transistors |
274K |
|
|
| 14 |
2N321 |
alloy-junction germanium transistors |
279K |
|
|
| 15 |
2N3210 |
Small Signal Transistors |
34K |
|
|
| 16 |
2N3211 |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 500MA I(C) | TO-18
|
1488K |
|
|
| 17 |
2N3212 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 5A I(C) | TO-37
|
1488K |
|
|
| 18 |
2N3213 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 5A I(C) | TO-37
|
75K |
|
|
| 19 |
2N3214 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 5A I(C) | TO-37
|
406K |
|
|
| 20 |
2N3215 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 5A I(C) | TO-37
|
75K |
|
|
| 21 |
2N3217 |
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 100MA I(C) | TO-46
|
122K |
|
|
| 22 |
2N3218 |
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 100MA I(C) | TO-46
|
122K |
|
|
| 23 |
2N3218 |
SPRINGFIELD, NEW JERSEY 07081 |
138K |
|
|
| 24 |
2N3219 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-46
|
122K |
|
|
| 25 |
2N322 |
alloy-junction germanium transistors |
274K |
|
|
| 26 |
2N322 |
alloy-junction germanium transistors |
279K |
|
|
| 27 |
2N3220 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | STR-10
|
174K |
|
|
| 28 |
2N3221 |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 2A I(C) | STR-10
|
174K |
|
|
| 29 |
2N3222 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | STR-10
|
174K |
|
|
| 30 |
2N3223 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2A I(C) | STR-10
|
174K |
|
|
| 31 |
2N3224 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | TO-5
|
393K |
|
|
| 32 |
2N3225 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | TO-5
|
149K |
|
|
| 33 |
2N3226 |
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 5A I(C) | TO-3
|
329K |
|
|
| 34 |
2N3226 |
Silicon NPN Power Transistors |
132K |
|
|
| 35 |
2N3226 |
Silicon NPN Power Transistors |
110K |
|
|
| 36 |
2N3227 |
Chip Type 2C2369A Geometry 0005 Polarity NPN |
31K |
|
|
| 37 |
2N3227 |
Silicon NPN Transistor |
217K |
|
|
| 38 |
2N3227 |
SILICON ANNULAR TRANSISTORS |
119K |
|
|
| 39 |
2N3227 |
SI NPN LP HF BJT MANUFACTURER |
90K |
|
|
| 40 |
2N3227_02 |
Silicon NPN Transistor |
217K |
|
|
| 41 |
2N3227UB |
Silicon NPN Transistor |
240K |
|
|
| 42 |
2N3228 |
5-A SILICON CONTROLLED RECTIFIERS |
139K |
|
|
| 43 |
2N3228 |
SPRINGFIELD, NEW JERSEY 07081 |
250K |
|
|
| 44 |
2N3229 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 2.5A I(C) | STR-10
|
228K |
|
|
| 45 |
2N323 |
alloy-junction germanium transistors |
274K |
|
|
| 46 |
2N3231 |
Power Transistors |
356K |
|
|
| 47 |
2N3232 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | TO-3
|
280K |
|
|
| 48 |
2N3232 |
Silicon NPN Power Transistors |
132K |
|
|
| 49 |
2N3232 |
Silicon NPN Power Transistors |
109K |
|
|
| 50 |
2N3233 |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | TO-3
|
209K |
|
|
