| 1 |
2N1650 |
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 3A I(C) | STR-10
|
68K |
|
|
| 2 |
2N1651 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 25A I(C) | TO-41
|
57K |
|
|
| 3 |
2N1651 |
DAP transistors are de-signed for efficient high current switching at high frequencies |
136K |
|
|
| 4 |
2N1652 |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 25A I(C) | TO-41
|
57K |
|
|
| 5 |
2N1652 |
DAP transistors are de-signed for efficient high current switching at high frequencies |
136K |
|
|
| 6 |
2N1653 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 25A I(C) | TO-41
|
57K |
|
|
| 7 |
2N1653 |
DAP transistors are de-signed for efficient high current switching at high frequencies |
136K |
|
|
| 8 |
2N1654 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 50MA I(C) | TO-5
|
149K |
|
|
| 9 |
2N1655 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5
|
149K |
|
|
| 10 |
2N1656 |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 50MA I(C) | TO-5
|
149K |
|
|
