| 841 |
IRF5210S |
Power MOSFET(Vdss=-100V, Rds(on)=0.06ohm, Id=-40A)
|
191K |
|
 |
| 842 |
IRF5210SPBF |
HEXFET Power MOSFET
|
713K |
|
|
| 843 |
IRF5210STRL |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-263AB
|
227K |
|
|
| 844 |
IRF5210STRR |
TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 40A I(D) | TO-263AB
|
227K |
|
|
| 845 |
IRF521FI |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 7A I(D) | TO-220AB
|
349K |
|
|
| 846 |
IRF521R |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 9.2A I(D) | TO-220AB
|
41K |
|
|
| 847 |
IRF522 |
N-Channel Power MOSFETs, 11 A, 60-100 V
|
170K |
|
|
| 848 |
IRF522 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs
|
76K |
|
|
| 849 |
IRF522FI |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
|
349K |
|
|
| 850 |
IRF522R |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-220AB
|
41K |
|
|
| 851 |
IRF523 |
N-Channel Power MOSFETs, 11 A, 60-100 V
|
170K |
|
|
| 852 |
IRF523 |
N - CHANNEL ENHANCEMENT MODE VERTICAL DMOS POWER FETs
|
76K |
|
|
| 853 |
IRF523FI |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB
|
349K |
|
|
| 854 |
IRF523R |
TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 8A I(D) | TO-220AB
|
41K |
|
|
| 855 |
IRF530 |
N-Channel Power MOSFETs, 20 A, 60-100 V
|
184K |
|
|
| 856 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
160K |
|
|
| 857 |
IRF530 |
N CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
|
192K |
|
|
| 858 |
IRF530 |
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET⑩ II POWER MOSFET
|
192K |
|
|
| 859 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
192K |
|
|
| 860 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
192K |
|
|
| 861 |
IRF530 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE
|
493K |
|
|
| 862 |
IRF530 |
Power MOSFET
|
623K |
|
|
| 863 |
IRF530 |
N-CHANNEL 100V - 0.115 W - 14A TO-220 LOW GATE CHARGE STripFET? II POWER MOSFET
|
196K |
|
|
| 864 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
196K |
|
|
| 865 |
IRF530 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
|
196K |
|
|
| 866 |
IRF530 |
Power MOSFET(Vdss=100V, Rds(on)=0.16ohm, Id=14A)
|
180K |
|
|
| 867 |
IRF530 |
N-CHANNEL POWER MOSFETS
|
362K |
|
|
| 868 |
IRF530 |
N-Channel Power MOSFETs Avalanche Energy Rated
|
399K |
|
|
| 869 |
IRF530/D |
N-Channel Enhancement-Mode Silicon Gate
|
170K |
|
|
| 870 |
IRF5305 |
Power MOSFET(Vdss=-55V, Rds(on)=0.06ohm, Id=-31A)
|
127K |
|
|
