| 1 |
FDS4435 |
P-Channel Logic Level PowerTrenchTM MOSFET
|
652K |
|
 |
| 2 |
FDS4435 |
P-Channel Logic Level PowerTrench⑩MOSFET
|
176K |
|
|
| 3 |
FDS4435 |
30V P-Channel PowerTrench MOSFET
|
67K |
|
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| 4 |
FDS4435 |
P-Channel Logic Level PowerTrench?MOSFET
|
175K |
|
|
| 5 |
FDS4435_01 |
30V P-Channel PowerTrench MOSFET
|
67K |
|
|
| 6 |
FDS4435A |
P-Channel Logic Level PowerTrench⑩MOSFET
|
176K |
|
|
| 7 |
FDS4435A |
P-Channel Logic Level PowerTrench⑩MOSFET
|
176K |
|
|
| 8 |
FDS4435A |
P-Channel Logic Level PowerTrench MOSFET
|
176K |
|
|
| 9 |
FDS4435A |
P-Channel Logic Level PowerTrench?MOSFET
|
175K |
|
|
| 10 |
FDS4435A |
P-Channel Logic Level PowerTrench?MOSFET
|
175K |
|
|
| 11 |
FDS4435BZ |
30 Volt P-Channel PowerTrench MOSFET
|
97K |
|
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| 12 |
FDS4435BZ |
P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20mヘ
|
295K |
|
|
| 13 |
FDS4435BZ |
P-Channel PowerTrench® MOSFET
-30V, -8.8A, 20mFET 型 MOSFET P 通道，金属氧化物
FET 特点 逻辑电平门 开态Rds（最大）@ Id, Vgs @ 25° C 20 毫欧 @ 8.8A, 10V
漏极至源极电压(Vdss) 30V
Id 时的 Vgs(th)（最大） 3V @ 250µA
闸电荷(Qg) @ Vgs 40nC @ 10V
电流 - 连续漏极(Id) @ 25° C 8.8A
在 Vds 时的输入电容(Ciss) 1845pF @ 15V
功率 - 最大 1W
安装类型 表面贴装
|
231K |
|
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| 14 |
FDS4435BZ_07 |
P-Channel PowerTrench㈢ MOSFET -30V, -8.8A, 20mヘ
|
295K |
|
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