| 序号 | 型号 | 描述 | 大小 | 厂家Logo | 下载 |
|---|
| 301 | C30637ESC-07-ST | Optoelectronic | 290K |
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| 302 | C30637EST-04-FC | Optoelectronic | 290K |
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| 303 | C30637EST-04-SC | Optoelectronic | 290K |
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| 304 | C30637EST-04-ST | Optoelectronic | 290K |
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| 305 | C30637EST-07-FC | Optoelectronic | 290K |
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| 306 | C30637EST-07-SC | Optoelectronic | 290K |
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| 307 | C30637EST-07-ST | Optoelectronic | 290K |
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| 308 | C30641 | Large-Area InGaAs Photodiodes | 261K |
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| 309 | C30642 | Large-Area InGaAs Photodiodes | 261K |
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| 310 | C30644 | Optoelectronic | 412K |
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| 311 | C30645D | Optoelectronic | 412K |
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| 312 | C30645DCER | Optoelectronic | 412K |
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| 313 | C30645DQC | Optoelectronic | 412K |
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| 314 | C30645E | Optoelectronic | 412K |
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| 315 | C30645E | InGaAs Avalanche Photodiode | 288K |
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| 316 | C30645ECER | Optoelectronic | 412K |
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| 317 | C30645ECQ | Optoelectronic | 412K |
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| 318 | C30659 | Silicon and InGaAs APD Preamplifier Modules | 1277K |
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| 319 | C30659-1060-3A | Silicon and InGaAs APD Preamplifier Modules | 1277K |
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| 320 | C30659-1060-R8B | Silicon and InGaAs APD Preamplifier Modules | 1277K |
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| 321 | C30659-1550-R08B | Silicon and InGaAs APD Preamplifier Modules | 1277K |
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| 322 | C30659-1550-R2A | Silicon and InGaAs APD Preamplifier Modules | 1277K |
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| 323 | C30659-900-R5B | Silicon and InGaAs APD Preamplifier Modules | 1277K |
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| 324 | C30659-900-R8A | Silicon and InGaAs APD Preamplifier Modules | 1277K |
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| 325 | C30662E | InGaAs Avalanche Photodiode | 288K |
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| 326 | C30665 | Large-Area InGaAs Photodiodes | 261K |
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| 327 | C307 | 150 WATTS (AC) DC/DC SINGLE OUTPUT | 385K |
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| 328 | C30724P | LOW COST SILICON AVALANCHE PHOTODIODE (Plastic Encapsulated Package) | 179K |
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| 329 | C30724P | LOW COST SILICON AVALANCHE PHOTODIODE (Plastic Encapsulated Package) | 179K |
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| 330 | C30737 | Epitaxial Silicon Avalanche Photodiode | 103K |
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