| 121 |
BCR10PM |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
198K |
|
 |
| 122 |
BCR10PM-12 |
Isolated Triac 10 Amperes/400-600 Volts
|
84K |
|
|
| 123 |
BCR10PM12L |
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
|
430K |
|
|
| 124 |
BCR10PM-12L |
Isolated Triac 10 Amperes/400-600 Volts
|
84K |
|
|
| 125 |
BCR10PM-12LA |
Triac
|
106K |
|
|
| 126 |
BCR10PM-12LA-A8 |
Triac
|
106K |
|
|
| 127 |
BCR10PM-12LB |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150?C)
|
113K |
|
|
| 128 |
BCR10PM-12LD |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
131K |
|
|
| 129 |
BCR10PM-12LD-A8 |
Triac Medium Power Use (The product guaranteed maximum junction temperature of 150°C)
|
131K |
|
|
| 130 |
BCR10PM-12LG |
Triac Medium Power Use
|
124K |
|
|
| 131 |
BCR10PM-12LG_07 |
Triac Medium Power Use
|
135K |
|
|
| 132 |
BCR10PM-12LG-A8 |
Triac Medium Power Use
|
135K |
|
|
| 133 |
BCR10PM-12LG-A8 |
Triac Medium Power Use
|
124K |
|
|
| 134 |
BCR10PM12R |
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
|
273K |
|
|
| 135 |
BCR10PM8 |
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB
|
273K |
|
|
| 136 |
BCR10PM-8 |
Isolated Triac 10 Amperes/400-600 Volts
|
84K |
|
|
| 137 |
BCR10PM8L |
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB
|
273K |
|
|
| 138 |
BCR10PM-8L |
Isolated Triac 10 Amperes/400-600 Volts
|
84K |
|
|
| 139 |
BCR10PM8R |
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB
|
273K |
|
|
| 140 |
BCR10PN |
NPN/PNP Silicon Digital Transistor Array
|
53K |
|
|
| 141 |
BCR10PN |
NPN/PNP Silicon Digital Tansistor Array (Switching circuit, inverter, interface circuit, drive circuit)
|
64K |
|
|
| 142 |
BCR10PN_07 |
NPN/PNP Silicon Digital Transistor Array
|
144K |
|
|
| 143 |
BCR10PNQ62702C2411 |
TRANSISTOR DIGITAL SOT363
|
64K |
|
|
| 144 |
BCR10UM |
MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
57K |
|
|
| 145 |
BCR10UM12 |
TRIAC|600V V(DRM)|10A I(T)RMS|TO-220AB
|
225K |
|
|
| 146 |
BCR10UM8 |
TRIAC|400V V(DRM)|10A I(T)RMS|TO-220AB
|
225K |
|
|
| 147 |
BCR112 |
NPN Silicon Digital Transistor (Switching circuit, inverter, inferface circuit, driver circuit)
|
36K |
|
|
| 148 |
BCR112 |
NPN Silicon Digital Transistor
|
211K |
|
|
| 149 |
BCR112 |
NPN Silicon Digital Transistor
|
123K |
|
|
| 150 |
BCR112_07 |
NPN Silicon Digital Transistor
|
123K |
|
|
