| 1 |
APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
65K |
|
 |
| 2 |
APT5010B2 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
65K |
|
|
| 3 |
APT5010B2FLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
65K |
|
|
| 4 |
APT5010B2FLL |
POWER MOS 7 FREDFET
|
178K |
|
|
| 5 |
APT5010B2FLL_04 |
POWER MOS 7 FREDFET
|
178K |
|
|
| 6 |
APT5010B2LC |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
122K |
|
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| 7 |
APT5010B2LC |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
|
67K |
|
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| 8 |
APT5010B2LL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
70K |
|
|
| 9 |
APT5010B2LL |
POWER MOS 7 MOSFET
|
177K |
|
|
| 10 |
APT5010B2LL_04 |
POWER MOS 7 MOSFET
|
177K |
|
|
| 11 |
APT5010B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
66K |
|
|
| 12 |
APT5010B2VR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
63K |
|
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