| 1 |
APT1001 |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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36K |
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| 2 |
APT1001 |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
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36K |
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| 3 |
APT1001R1AN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
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214K |
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| 4 |
APT1001R1AVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs
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69K |
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| 5 |
APT1001R1BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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53K |
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| 6 |
APT1001R1BNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-247AD
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189K |
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| 7 |
APT1001R1BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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72K |
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| 8 |
APT1001R1DN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
|
395K |
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| 9 |
APT1001R1HN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-258ISO
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227K |
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| 10 |
APT1001R1HVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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68K |
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| 11 |
APT1001R1SN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10.5A I(D) | TO-263AB
|
247K |
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| 12 |
APT1001R2AN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-3
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61K |
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| 13 |
APT1001R2BN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 10A I(D) | TO-247AD
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63K |
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| 14 |
APT1001R2HN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-247HERM
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54K |
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| 15 |
APT1001R3AN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 8.5A I(D) | TO-3
|
214K |
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| 16 |
APT1001R3BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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53K |
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| 17 |
APT1001R3HN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9A I(D) | TO-258ISO
|
227K |
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| 18 |
APT1001R6BFLL |
POWER MOS 7 R FREDFET
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156K |
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| 19 |
APT1001R6BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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51K |
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| 20 |
APT1001R6SFLL |
POWER MOS 7 R FREDFET
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156K |
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| 21 |
APT1001RAN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 9.5A I(D) | TO-3
|
61K |
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| 22 |
APT1001RBLC |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
36K |
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| 23 |
APT1001RBN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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52K |
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| 24 |
APT1001RBNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD
|
189K |
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| 25 |
APT1001RBVFR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 11A I(D) | TO-247AD
|
100K |
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| 26 |
APT1001RBVFR |
POWER MOS V FREDFET
|
126K |
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| 27 |
APT1001RBVFR |
POWER MOS V FREDFET
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126K |
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| 28 |
APT1001RBVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
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69K |
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| 29 |
APT1001RDN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
|
395K |
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| 30 |
APT1001RSLC |
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
|
36K |
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