151 |
2SC5172_06 |
Silicon NPN Triple Diffused Type (PCT process) Switching Regulator and High-Voltage Switching Applications
|
146K |
|
|
152 |
2SC5173 |
High-Voltage Switching and Amplifier Applications
|
147K |
|
|
153 |
2SC5173 |
HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS
|
238K |
|
|
154 |
2SC5173_04 |
High-Voltage Switching and Amplifier Applications
|
147K |
|
|
155 |
2SC5174 |
Power Amplifier Applications
|
123K |
|
|
156 |
2SC5174 |
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE
|
176K |
|
|
157 |
2SC5174_04 |
Power Amplifier Applications
|
123K |
|
|
158 |
2SC5175 |
NPN EPITAXIAL TYPE (HIHG CURRENT SWITCHING APPLICATIONS)
|
147K |
|
|
159 |
2SC5176 |
High-Current Switching Applications
|
154K |
|
|
160 |
2SC5176 |
NPN EPITAXIAL TYPE (HIGH CURRENT SWITCHING, DC-DC CONVERTER APPLICATIONS)
|
228K |
|
|
161 |
2SC5176_04 |
High-Current Switching Applications
|
154K |
|
|
162 |
2SC5176O |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR
|
143K |
|
|
163 |
2SC5176Y |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 5A I(C) | TO-220VAR
|
143K |
|
|
164 |
2SC5177 |
NPN EPITAXIAL SILICON TRANSISTOR IN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
58K |
|
|
165 |
2SC5177T1 |
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-23
|
351K |
|
|
166 |
2SC5178 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
83K |
|
|
167 |
2SC5178T1 |
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 10MA I(C) | SOT-143R
|
356K |
|
|
168 |
2SC5178-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
83K |
|
|
169 |
2SC5178-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
83K |
|
|
170 |
2SC5179 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
59K |
|
|
171 |
2SC5179T1 |
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SC-70
|
413K |
|
|
172 |
2SC5179-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
59K |
|
|
173 |
2SC5179-T2 |
NPN EPITAXIAL SILICON TRANSISTOR IN SMALL MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
59K |
|
|
174 |
2SC5180 |
NPN EPITAXIAL SILICON TRANSISTOR IN SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
55K |
|
|
175 |
2SC5180(NE68618) |
Discrete
|
47K |
|
|
176 |
2SC5180T1 |
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-343R
|
318K |
|
|
177 |
2SC5181 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
52K |
|
|
178 |
2SC5181(NE68619) |
Discrete
|
368K |
|
|
179 |
2SC5181T1 |
TRANSISTOR | BJT | NPN | 3V V(BR)CEO | 30MA I(C) | SOT-416
|
308K |
|
|
180 |
2SC5181-T1 |
NPN EPITAXIAL SILICON TRANSISTOR IN ULTRA SUPER MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION
|
52K |
|
|