| 1 |
2N655 |
alloy-junction germanium transistors
|
274K |
|
 |
| 2 |
2N655 |
GE PNP LO-PWR BJT
|
93K |
|
|
| 3 |
2N6550 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 10MA I(DSS) | TO-46
|
95K |
|
|
| 4 |
2N6550 |
N-Channel Silicon Junction Field-Effect Transistor
|
98K |
|
|
| 5 |
2N6550 |
N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR
|
134K |
|
|
| 6 |
2N6551 |
Power Transistors
|
54K |
|
|
| 7 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
| 8 |
2N6551 |
NPN SILICON AMPLIFIER TRANSISTORS
|
151K |
|
|
| 9 |
2N6551N |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
| 10 |
2N6552 |
Power Transistors
|
54K |
|
|
| 11 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
| 12 |
2N6552 |
NPN SILICON AMPLIFIER TRANSISTORS
|
151K |
|
|
| 13 |
2N6552N |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
| 14 |
2N6553 |
Power Transistors
|
54K |
|
|
| 15 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
| 16 |
2N6553 |
NPN SILICON AMPLIFIER TRANSISTORS
|
151K |
|
|
| 17 |
2N6553N |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
| 18 |
2N6554 |
Power Transistors
|
54K |
|
|
| 19 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
| 20 |
2N6554 |
COLLECTOR-EMITTER VOLTAGE
|
138K |
|
|
| 21 |
2N6554N |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
| 22 |
2N6555 |
Power Transistors
|
54K |
|
|
| 23 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
| 24 |
2N6555 |
COLLECTOR-EMITTER VOLTAGE
|
138K |
|
|
| 25 |
2N6555N |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
| 26 |
2N6556 |
Power Transistors
|
54K |
|
|
| 27 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
| 28 |
2N6556 |
COLLECTOR-EMITTER VOLTAGE
|
138K |
|
|
| 29 |
2N6556N |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
| 30 |
2N6557 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-202AC
|
64K |
|
|
