1 |
2N651 |
alloy-junction germanium transistors
|
274K |
|
|
2 |
2N651 |
alloy-junction germanium transistors
|
279K |
|
|
3 |
2N6510 |
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7A I(C) | TO-3
|
62K |
|
|
4 |
2N6510 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
15K |
|
|
5 |
2N6510 |
Silicon NPN Power Transistors
|
112K |
|
|
6 |
2N6510 |
SI NPN POWER BJT
|
97K |
|
|
7 |
2N6511 |
Bipolar NPN Device
|
11K |
|
|
8 |
2N6511 |
Bipolar NPN Device
|
11K |
|
|
9 |
2N6511 |
Silicon NPN Power Transistors
|
112K |
|
|
10 |
2N6512 |
Bipolar NPN Device
|
11K |
|
|
11 |
2N6512 |
Bipolar NPN Device
|
11K |
|
|
12 |
2N6512 |
Silicon NPN Power Transistors
|
112K |
|
|
13 |
2N6513 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 7A I(C) | TO-3
|
183K |
|
|
14 |
2N6513 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
15K |
|
|
15 |
2N6513 |
Silicon NPN Power Transistors
|
112K |
|
|
16 |
2N6513 |
SI NPN POWER BJT
|
121K |
|
|
17 |
2N6514 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7A I(C) | TO-3
|
404K |
|
|
18 |
2N6514 |
Silicon NPN Power Transistors
|
112K |
|
|
19 |
2N6514 |
Bipolar NPN Device in a Hermetically sealed TO3
|
15K |
|
|
20 |
2N6515 |
High Voltage Transistors
|
104K |
|
|
21 |
2N6515 |
High Voltage Transistor 625mW
|
437K |
|
|
22 |
2N6515 |
High Voltage Transistors
|
104K |
|
|
23 |
2N6515 |
Small Signal Transistors
|
22K |
|
|
24 |
2N6515 |
High Voltage Transistors
|
108K |
|
|
25 |
2N6515 |
High Voltage Transistor 625mW
|
303K |
|
|
26 |
2N6515/D |
High Voltage Transistors
|
100K |
|
|
27 |
2N6515_11 |
High Voltage Transistor 625mW
|
303K |
|
|
28 |
2N6516 |
NPN EPITAXIAL SILICON TRANSISTOR
|
36K |
|
|
29 |
2N6516 |
Small Signal Transistors
|
22K |
|
|
30 |
2N6517 |
Mini size of Discrete semiconductor elements
|
512K |
|
|