211 |
2N6548 |
NPN SILICON DARLINGTON TRANSISTORS
|
65K |
|
|
212 |
2N6548 |
NPN SILICON DARLINGTON TRANSISTORS
|
65K |
|
|
213 |
2N6548 |
Power Transistors
|
54K |
|
|
214 |
2N6548N |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-202VAR
|
26K |
|
|
215 |
2N6549 |
NPN SILICON DARLINGTON TRANSISTORS
|
65K |
|
|
216 |
2N6549 |
NPN SILICON DARLINGTON TRANSISTORS
|
65K |
|
|
217 |
2N6549 |
Power Transistors
|
54K |
|
|
218 |
2N6549 |
NPN DARLINGTON TRANSISTOR
|
129K |
|
|
219 |
2N6549N |
TRANSISTOR | BJT | DARLINGTON | NPN | 40V V(BR)CEO | 2A I(C) | TO-202VAR
|
26K |
|
|
220 |
2N655 |
alloy-junction germanium transistors
|
274K |
|
|
221 |
2N655 |
GE PNP LO-PWR BJT
|
93K |
|
|
222 |
2N6550 |
N-Channel Silicon Junction Field-Effect Transistor
|
98K |
|
|
223 |
2N6550 |
N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR
|
134K |
|
|
224 |
2N6550 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 10MA I(DSS) | TO-46
|
95K |
|
|
225 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
226 |
2N6551 |
Power Transistors
|
54K |
|
|
227 |
2N6551 |
NPN SILICON AMPLIFIER TRANSISTORS
|
151K |
|
|
228 |
2N6551N |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
229 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
230 |
2N6552 |
Power Transistors
|
54K |
|
|
231 |
2N6552 |
NPN SILICON AMPLIFIER TRANSISTORS
|
151K |
|
|
232 |
2N6552N |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
233 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
234 |
2N6553 |
NPN SILICON AMPLIFIER TRANSISTORS
|
151K |
|
|
235 |
2N6553 |
Power Transistors
|
54K |
|
|
236 |
2N6553N |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
237 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier
|
93K |
|
|
238 |
2N6554 |
Power Transistors
|
54K |
|
|
239 |
2N6554 |
COLLECTOR-EMITTER VOLTAGE
|
138K |
|
|
240 |
2N6554N |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|