| 121 |
2N2906A |
SILICON PLANAR EPITAXIAL PNP TRANSISTOR
|
245K |
|
 |
| 122 |
2N2906A |
RADIATION HARDENED
|
108K |
|
|
| 123 |
2N2906A |
PNP SMALL SIGNAL SILICON TRANSISTOR
|
70K |
|
|
| 124 |
2N2906A |
PNP SILICON TRANSISTOR
|
544K |
|
|
| 125 |
2N2906A |
Small Signal Transistors
|
34K |
|
|
| 126 |
2N2906A |
Medium Current General Purpose Amplifiers and Switches
|
796K |
|
|
| 127 |
2N2906A |
Silicon PNP Transistor
|
217K |
|
|
| 128 |
2N2906A |
Chip Type 2C2904A Geometry 0600 Polarity PNP
|
30K |
|
|
| 129 |
2N2906A_02 |
Silicon PNP Transistor
|
217K |
|
|
| 130 |
2N2906A_1 |
RADIATION HARDENED
|
108K |
|
|
| 131 |
2N2906ACSM |
PNP
|
11K |
|
|
| 132 |
2N2906ACSM |
SILICON PLANAR EPITAXIAL PNP TRANSISTOR
|
166K |
|
|
| 133 |
2N2906ADCSM |
TRANSISTOR | BJT | PAIR | PNP | 60V V(BR)CEO | 600MA I(C) | LLCC
|
11K |
|
|
| 134 |
2N2906ADCSM |
Dual Bipolar PNP Devices in a hermetically sealed
|
15K |
|
|
| 135 |
2N2906AJ.TX.V |
Medium Current General Purpose Amplifiers and Switches
|
796K |
|
|
| 136 |
2N2906AL |
PNP SMALL SIGNAL SILICON TRANSISTOR
|
70K |
|
|
| 137 |
2N2906AL |
RADIATION HARDENED
|
108K |
|
|
| 138 |
2N2906AL |
PNP SMALL SIGNAL SILICON TRANSISTOR
|
70K |
|
|
| 139 |
2N2906AUA |
PNP SMALL SIGNAL SILICON TRANSISTOR
|
70K |
|
|
| 140 |
2N2906AUA |
RADIATION HARDENED
|
108K |
|
|
| 141 |
2N2906AUB |
RADIATION HARDENED
|
108K |
|
|
| 142 |
2N2906AUB |
PNP SMALL SIGNAL SILICON TRANSISTOR
|
70K |
|
|
| 143 |
2N2906AUB |
PNP SMALL SIGNAL SILICON TRANSISTOR
|
70K |
|
|
| 144 |
2N2906AUB |
Silicon PNP Transistor
|
240K |
|
|
| 145 |
2N2906AUBC |
RADIATION HARDENED
|
108K |
|
|
| 146 |
2N2906CSM |
Bipolar PNP Device in a Hermetically sealed LCC1
|
15K |
|
|
| 147 |
2N2906DCSM |
PNP
|
11K |
|
|
| 148 |
2N2906DCSM |
Dual Bipolar PNP Devices in a hermetically sealed
|
15K |
|
|
| 149 |
2N2906E |
Laser Marking
|
22K |
|
|
| 150 |
2N2906E |
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE, SWITCHING)
|
52K |
|
|
