| 1 |
1N5551US |
This specification covers the performance requirements for silicon, general purpose,
|
206K |
|
 |
| 2 |
1N5551US |
VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS
|
95K |
|
|
| 3 |
1N5551US |
This specification covers the performance requirements for silicon, general purpose,
|
207K |
|
|
| 4 |
1N5551US |
HIGH CURRENT AXIAL LEAD RECTIFIERS : 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER
|
147K |
|
|
| 5 |
1N5551US |
Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode
|
154K |
|
|
| 6 |
1N5551US |
HIGH CURRENT AXIAL LEAD RECTIFIERS
|
51K |
|
|
