| 1 |
1N5550 |
This specification covers the performance requirements for silicon, general purpose,
|
206K |
|
 |
| 2 |
1N5550 |
RECTIFIERS
|
47K |
|
|
| 3 |
1N5550 |
GLASS PASSIVATED JUNCTION RECTIFIER
|
54K |
|
|
| 4 |
1N5550 |
Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode
|
163K |
|
|
| 5 |
1N5550 |
This specification covers the performance requirements for silicon, general purpose,
|
207K |
|
|
| 6 |
1N5550 |
HIGH CURRENT AXIAL LEAD RECTIFIERS : 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER
|
147K |
|
|
| 7 |
1N5550 |
Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode
|
163K |
|
|
| 8 |
1N5550 |
HIGH CURRENT AXIAL LEAD RECTIFIERS
|
51K |
|
|
| 9 |
1N5550 |
RECTIFIERS
|
77K |
|
|
| 10 |
1N5550_08 |
Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode
|
163K |
|
|
| 11 |
1N5550_08 |
HIGH CURRENT AXIAL LEAD RECTIFIERS
|
51K |
|
|
| 12 |
1N5550-1 |
RECTIFIERS
|
47K |
|
|
| 13 |
1N5550D3A |
POWER RECTIFIER DIODE
|
300K |
|
|
| 14 |
1N5550D3B |
POWER RECTIFIER DIODE
|
300K |
|
|
| 15 |
1N5550US |
This specification covers the performance requirements for silicon, general purpose,
|
206K |
|
|
| 16 |
1N5550US |
VOIDLESS HERMITICALLY SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS
|
95K |
|
|
| 17 |
1N5550US |
This specification covers the performance requirements for silicon, general purpose,
|
207K |
|
|
| 18 |
1N5550US |
HIGH CURRENT AXIAL LEAD RECTIFIERS : 200-1000 VOLT, 3.0 AMP, 2000 NANOSECOND RECTIFIER
|
147K |
|
|
| 19 |
1N5550US |
Surface Mount Hermetically Sealed Standard Recovery Rectifier Diode
|
154K |
|
|
| 20 |
1N5550US |
HIGH CURRENT AXIAL LEAD RECTIFIERS
|
51K |
|
|
