| 1 |
NE57800 |
TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 30MA I(C) | CHIP
|
474K |
|
|
| 2 |
NE57807 |
TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 30MA I(C) | SOT-100VAR
|
474K |
|
|
| 3 |
NE57810 |
Advanced DDR memory termination power with external reference in |
164K |
|
|
| 4 |
NE57810 |
Advanced DDR memory termination power with external reference in |
164K |
|
|
| 5 |
NE57810 |
Advanced DDR memory termination power with external reference voltage in |
97K |
|
|
| 6 |
NE57810S |
Advanced DDR memory termination power with external reference in |
164K |
|
|
| 7 |
NE57810S |
Advanced DDR memory termination power with external reference in |
164K |
|
|
| 8 |
NE57810S |
Advanced DDR memory termination power with external reference voltage in |
97K |
|
|
| 9 |
NE57811 |
Advanced DDR memory termination power with shutdown |
141K |
|
|
| 10 |
NE57811 |
Advanced DDR memory termination power with shutdown |
141K |
|
|
| 11 |
NE57811S |
Advanced DDR memory termination power with shutdown |
141K |
|
|
| 12 |
NE57811S |
Advanced DDR memory termination power with shutdown |
141K |
|
|
| 13 |
NE57814 |
DDR memory termination regulator with standby mode and enhanced efficiency |
208K |
|
|
| 14 |
NE57814 |
DDR memory termination regulator with standby mode and enhanced efficiency |
208K |
|
|
| 15 |
NE57814DD |
DDR memory termination regulator with standby mode and enhanced efficiency |
208K |
|
|
| 16 |
NE57814DD |
DDR memory termination regulator with standby mode and enhanced efficiency |
208K |
|
|
| 17 |
NE57835 |
TRANSISTOR | BJT | NPN | 11V V(BR)CEO | 30MA I(C) | SOT-173
|
474K |
|
|
| 18 |
NE578D |
Compander
|
118K |
|
|
