| 序号 | 型号 | 描述 | 大小 | 厂家Logo | 下载 |
|---|
| 1 | IRGBC20M | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) | 252K |
|
|
| 2 | IRGBC20M | Fit Rate / Equivalent Device Hours | 100K |
|
|
| 3 | IRGBC20MD2 | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=600V, @Vge=15V, Ic=8.0A) | 423K |
|
|
| 4 | IRGBC20MD2 | Fit Rate / Equivalent Device Hours | 100K |
|
|
| 5 | IRGBC20MD2-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=8.0A) | 430K |
|
|
| 6 | IRGBC20M-S | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=8.0A) | 253K |
|
|
