| 序号 | 型号 | 描述 | 大小 | 厂家Logo | 下载 |
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| 1 | GT10J321 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT | 162K |
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| 2 | GT10J321 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT | 162K |
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| 3 | GT10J321 | Silicon N Channel IGBT High Power Switching Applications | 209K |
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| 4 | GT10J321_06 | Silicon N Channel IGBT High Power Switching Applications | 209K |
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