序号 | 型号 | 描述 | 大小 | 厂家Logo | 下载 |
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1 | BDY55 | NPNSILICON TRANSISTORS, DIFFUSED MESA(LF Large Signal Power Amplificational High Current Fast Switching) | 161K | ||
2 | BDY55 | Silicon NPN Power Transistors | 124K | ||
3 | BDY55 | NPN SILICON TRANSISTORS, DIFFUSED MESA | 137K | ||
4 | BDY55 | Silicon NPN Power Transistors | 112K | ||
5 | BDY55 | Bipolar NPN Device in a Hermetically sealed TO3 | 15K | ||
6 | BDY55 | Silicon NPN Power Transistors | 132K | ||
7 | BDY55X | NPN | 12K | ||
8 | BDY55X | Bipolar NPN Device in a Hermetically sealed TO3 | 16K |