| 1 |
APT10021DFN |
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 1KV V(BR)DSS | 40A I(D)
|
122K |
|
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| 2 |
APT10021DN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
|
395K |
|
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| 3 |
APT10021JFLL |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
73K |
|
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| 4 |
APT10021JFLL |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
159K |
|
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| 5 |
APT10021JFLL_04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
159K |
|
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| 6 |
APT10021JLL |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
71K |
|
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| 7 |
APT10021JLL |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
158K |
|
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| 8 |
APT10021JLL_04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
158K |
|
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| 9 |
APT10025JLC |
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs |
36K |
|
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| 10 |
APT10025JVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
75K |
|
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| 11 |
APT10025JVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
72K |
|
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| 12 |
APT10025JVFR_04 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
72K |
|
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| 13 |
APT10025JVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
72K |
|
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| 14 |
APT10025PVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. |
36K |
|
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| 15 |
APT10026JFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
73K |
|
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| 16 |
APT10026JFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
114K |
|
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| 17 |
APT10026JFLL_03 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
114K |
|
|
| 18 |
APT10026JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
71K |
|
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| 19 |
APT10026JLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
113K |
|
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| 20 |
APT10026JLL_03 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
113K |
|
|
| 21 |
APT10026JN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
65K |
|
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| 22 |
APT10026JNR |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 33A I(D)
|
95K |
|
|
| 23 |
APT10026L2FLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
67K |
|
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| 24 |
APT10026L2FLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
108K |
|
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| 25 |
APT10026L2FLL_03 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
108K |
|
|
| 26 |
APT10026L2LL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
66K |
|
|
| 27 |
APT10026L2LL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
107K |
|
|
| 28 |
APT10026L2LL_03 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. |
107K |
|
|
| 29 |
APT10026RKVR |
Volts:1000V RDS(ON)26Ohms ID(cont):0.48Amps|MOSFETs
|
34K |
|
|
| 30 |
APT1002R4AN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5.5A I(D) | TO-3
|
214K |
|
|
| 31 |
APT1002R4BN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
51K |
|
|
| 32 |
APT1002R4BNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6.5A I(D) | TO-247AD
|
112K |
|
|
| 33 |
APT1002R4CN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 5A I(D) | TO-254ISO
|
224K |
|
|
| 34 |
APT1002RAN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 6A I(D) | TO-3
|
214K |
|
|
| 35 |
APT1002RBN |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
51K |
|
|
| 36 |
APT1002RBNR |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 7A I(D) | TO-247AD
|
112K |
|
|
| 37 |
APT1002RCN |
N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
50K |
|
|
| 38 |
APT1002RDN |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | CHIP
|
395K |
|
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