| 1 |
AP1041 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-111
|
64K |
|
|
| 2 |
AP1042 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-111
|
64K |
|
|
| 3 |
AP1043 |
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 5A I(C) | TO-3
|
63K |
|
|
| 4 |
AP1044 |
TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3
|
63K |
|
|
| 5 |
AP1045 |
TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 5A I(C) | TO-3
|
63K |
|
|
| 6 |
AP1045A |
2.4~2.5 GHz High Power Amplifier |
293K |
|
|
| 7 |
AP104-69 |
RF Amplifier
|
259K |
|
|
| 8 |
AP1047 |
TRANSISTOR | BJT | PNP | 225V V(BR)CEO | 3A I(C) | TO-66
|
59K |
|
|
| 9 |
AP1047 |
AP1047 is a linear, three-stage power amplifier
MMIC with super high output power in 2.4GHz band
utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device delivers 22dBm output power under 64QAM OFDM modulation, with
2.5% EVM at 3.3V. The PA also includes on-chip
power detector, providing a DC voltage proportional to the output power of device. The AP1047 is housed in a 3 x 3(mm), 16 pin, QFN leadless package. |
123K |
|
|
| 10 |
AP1048 |
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 30A I(C) | TO-210AE
|
89K |
|
|
| 11 |
AP1049 |
TRANSISTOR | BJT | PNP | 200V V(BR)CEO | 30A I(C) | TO-3
|
89K |
|
|
