1 |
2N930 |
LOW-LEVEL, LOW-NOISE AMPLFIERS |
41K |
|
|
2 |
2N930 |
AMPLIFIER TRANSISTOR (NPN SILICON) |
148K |
|
|
3 |
2N930 |
COMPLEMENTARY SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS |
151K |
|
|
4 |
2N930 |
Chip Type 2C2484 Geometry 0307 Polarity NPN |
32K |
|
|
5 |
2N930 |
NPN LOW POWER SILICON TRANSISTOR |
69K |
|
|
6 |
2N930 |
NPN HIGH SPEED SATURATED SWITCHES |
116K |
|
|
7 |
2N930A |
AMPLIFIER TRANSISTOR (NPN SILICON) |
148K |
|
|
8 |
2N930A |
SI NPN LO-PWR BJT |
86K |
|
|
9 |
2N930B |
Small Signal Transistors |
34K |
|
|
10 |
2N930B |
Small Signal Transistors |
34K |
|
|
11 |
2N930CSM |
HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS |
20K |
|
|
12 |
2N934 |
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 200MA I(C) | TO-18
|
52K |
|
|
13 |
2N935 |
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 50MA I(C) | TO-18
|
52K |
|
|
14 |
2N936 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 50MA I(C) | TO-18
|
149K |
|
|
15 |
2N936 |
GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR |
229K |
|
|
16 |
2N937 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-18
|
149K |
|
|
17 |
2N937 |
GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR |
229K |
|
|
18 |
2N938 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-18
|
52K |
|
|
19 |
2N938 |
GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR |
229K |
|
|
20 |
2N939 |
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 100MA I(C) | TO-18
|
149K |
|
|
21 |
2N939 |
GENERAL PURPOSE SILICON EPITAXIAL JUNCTION PNP TRANSISTOR |
229K |
|
|