1 |
2N656 |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | TO-5
|
393K |
|
|
2 |
2N656 |
NPN SILICON PLANAR TRANSISTOR |
146K |
|
|
3 |
2N6560 |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. |
11K |
|
|
4 |
2N6561 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-3
|
65K |
|
|
5 |
2N6561 |
Bipolar NPN Device in a Hermetically sealed TO3 |
16K |
|
|
6 |
2N6562 |
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
|
224K |
|
|
7 |
2N6563 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-210AC
|
67K |
|
|
8 |
2N6564 |
SCRs (Silicon Controlled Rectifiers) |
32K |
|
|
9 |
2N6564 |
0.8 to 110 Amperes RMS 15 to 1200 Volts |
22K |
|
|
10 |
2N6565 |
Sensitive SCRs (0.8 A to 10 A) |
204K |
|
|
11 |
2N6565 |
0.8 to 110 Amperes RMS 15 to 1200 Volts |
22K |
|
|
12 |
2N6565 |
SCRs (Silicon Controlled Rectifiers) |
32K |
|
|
13 |
2N6565 |
Sensitive SCRs |
203K |
|
|
14 |
2N6566 |
SILICON EPITAXIAL JUNCTION |
136K |
|
|
15 |
2N6567 |
SILICON EPITAXIAL JUNCTION |
136K |
|
|
16 |
2N6569 |
POWER TRANSISTORS(12A,40V,100W) |
148K |
|
|
17 |
2N6569 |
POWER TRANSISTORS TO-3 CASE |
52K |
|
|
18 |
2N6569 |
Power Transistors |
356K |
|
|
19 |
2N6569 |
Silicon NPN Power Transistors |
122K |
|
|
20 |
2N6569 |
Silicon NPN Power Transistors |
160K |
|
|
21 |
2N6569 |
Silicon NPN Power Transistors |
125K |
|
|
22 |
2N6569 |
Silicon NPN Power Transistors |
133K |
|
|
23 |
2N656A |
Small Signal Transistors |
55K |
|
|
24 |
2N656A |
Small Signal Transistors |
55K |
|
|