1 |
2N655 |
alloy-junction germanium transistors |
274K |
|
|
2 |
2N655 |
GE PNP LO-PWR BJT |
93K |
|
|
3 |
2N6550 |
TRANSISTOR | JFET | N-CHANNEL | 20V V(BR)DSS | 10MA I(DSS) | TO-46
|
95K |
|
|
4 |
2N6550 |
N-Channel Silicon Junction Field-Effect Transistor |
98K |
|
|
5 |
2N6550 |
N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR |
134K |
|
|
6 |
2N6551 |
Power Transistors |
54K |
|
|
7 |
2N6551 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
93K |
|
|
8 |
2N6551 |
NPN SILICON AMPLIFIER TRANSISTORS |
151K |
|
|
9 |
2N6551N |
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
10 |
2N6552 |
Power Transistors |
54K |
|
|
11 |
2N6552 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
93K |
|
|
12 |
2N6552 |
NPN SILICON AMPLIFIER TRANSISTORS |
151K |
|
|
13 |
2N6552N |
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
14 |
2N6553 |
Power Transistors |
54K |
|
|
15 |
2N6553 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
93K |
|
|
16 |
2N6553 |
NPN SILICON AMPLIFIER TRANSISTORS |
151K |
|
|
17 |
2N6553N |
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
18 |
2N6554 |
Power Transistors |
54K |
|
|
19 |
2N6554 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
93K |
|
|
20 |
2N6554 |
COLLECTOR-EMITTER VOLTAGE |
138K |
|
|
21 |
2N6554N |
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
22 |
2N6555 |
Power Transistors |
54K |
|
|
23 |
2N6555 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
93K |
|
|
24 |
2N6555 |
COLLECTOR-EMITTER VOLTAGE |
138K |
|
|
25 |
2N6555N |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
26 |
2N6556 |
Power Transistors |
54K |
|
|
27 |
2N6556 |
Complementary Silicon Transistors manufactured by the epitaial planar process designed for general purpose audio amplifier |
93K |
|
|
28 |
2N6556 |
COLLECTOR-EMITTER VOLTAGE |
138K |
|
|
29 |
2N6556N |
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-202VAR
|
26K |
|
|
30 |
2N6557 |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-202AC
|
64K |
|
|
31 |
2N6557 |
NPN SILICON AMPLIFIER TRANSISTORS |
151K |
|
|
32 |
2N6557N |
TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 500MA I(C) | TO-202VAR
|
37K |
|
|
33 |
2N6558 |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | TO-202AC
|
52K |
|
|
34 |
2N6558 |
NPN SILICON AMPLIFIER TRANSISTORS |
151K |
|
|
35 |
2N6558N |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | TO-202VAR
|
37K |
|
|
36 |
2N6559 |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-202AC
|
64K |
|
|
37 |
2N6559 |
NPN SILICON AMPLIFIER TRANSISTORS |
151K |
|
|
38 |
2N6559N |
TRANSISTOR | BJT | NPN | 350V V(BR)CEO | 500MA I(C) | TO-202AC
|
37K |
|
|